-
1
-
-
0024627297
-
Multiplication noise of wide-bandwidth InP/InGaAsP/InGaAs avalanche photodiodes
-
J. C. Campbell, S. Chandrasekhar, W. T. Tsang, G. J. Qua, and B. C. Johnson, "Multiplication noise of wide-bandwidth InP/InGaAsP/InGaAs avalanche photodiodes," J. Lightwave Technol., vol. 7, pp. 473-477, 1989.
-
(1989)
J. Lightwave Technol.
, vol.7
, pp. 473-477
-
-
Campbell, J.C.1
Chandrasekhar, S.2
Tsang, W.T.3
Qua, G.J.4
Johnson, B.C.5
-
2
-
-
0001685402
-
Noise characteristics of thin multiplication region GaAs avalanche photodiodes
-
C. Hu, K. A. Anselm, B. G. Streetman, and J. C. Campbell, "Noise characteristics of thin multiplication region GaAs avalanche photodiodes," Appl. Phys. Lett., vol. 69, no. 24, pp. 3734-3736, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.69
, Issue.24
, pp. 3734-3736
-
-
Hu, C.1
Anselm, K.A.2
Streetman, B.G.3
Campbell, J.C.4
-
3
-
-
0032188252
-
+ diodes
-
+ diodes," IEEE Trans. Electron Dev., vol. 45, pp. 2102-7, 1998.
-
(1998)
IEEE Trans. Electron Dev.
, vol.45
, pp. 2102-2107
-
-
Li, K.F.1
Ong, D.S.2
David, J.P.R.3
Rees, G.J.4
Tozer, R.C.5
Robson, P.N.6
Grey, R.7
-
4
-
-
0030191091
-
Investigation of impact ionization in thin GaAs diodes
-
July
-
S. A. Plimmer, J. P. R. David, D. C. Herbert, T. W. Lee, G. J. Rees, P. A. Houston, R. Grey, P. N. Robson, A. W. Higgs, and D. R. Wight, "Investigation of impact ionization in thin GaAs diodes," IEEE Trans. Electron Dev., vol. 43, July 1996.
-
(1996)
IEEE Trans. Electron Dev.
, vol.43
-
-
Plimmer, S.A.1
David, J.P.R.2
Herbert, D.C.3
Lee, T.W.4
Rees, G.J.5
Houston, P.A.6
Grey, R.7
Robson, P.N.8
Higgs, A.W.9
Wight, D.R.10
-
5
-
-
0033097918
-
+ diodes with electron initiated multiplication
-
+ diodes with electron initiated multiplication," IEEE Photon. Tech. Lett., vol. 11, pp. 364-366, 1999.
-
(1999)
IEEE Photon. Tech. Lett.
, vol.11
, pp. 364-366
-
-
Li, K.F.1
Plimmer, S.A.2
David, J.P.R.3
Tozer, R.C.4
Rees, G.J.5
Robson, P.N.6
Button, C.C.7
Clark, J.C.8
-
6
-
-
0000947581
-
Thin multiplication region InAlAs homojunction avalanche photodiodes
-
C. Lenox, P. Yuan, H. Nie, O. Baklenov, C. Hansing, J. C. Campbell, and B. G. Streetman, "Thin multiplication region InAlAs homojunction avalanche photodiodes," Appl. Phys. Lett., vol. 73, pp. 783-784, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 783-784
-
-
Lenox, C.1
Yuan, P.2
Nie, H.3
Baklenov, O.4
Hansing, C.5
Campbell, J.C.6
Streetman, B.G.7
-
7
-
-
0032595644
-
Resonant-Cavity InGaAs/InAlAs avalanche photodiodes with gain-bandwidth-product of 290 Ghz
-
Sept.
-
C. Lenox, H. Nie, P. Yuan, G. Kinsey, A. L. Holmes Jr., B. G. Streetman, and J. C. Campbell, "Resonant-Cavity InGaAs/InAlAs avalanche photodiodes with gain-bandwidth-product of 290 Ghz," IEEE Photon. Technol. Lett., vol. 11, pp. 1162-1164, Sept. 1999.
-
(1999)
IEEE Photon. Technol. Lett.
, vol.11
, pp. 1162-1164
-
-
Lenox, C.1
Nie, H.2
Yuan, P.3
Kinsey, G.4
Holmes A.L., Jr.5
Streetman, B.G.6
Campbell, J.C.7
-
8
-
-
0033895072
-
Impact ionization characteristics of III-V semiconductors in a wide range of multiplication region thickness
-
P. Yuan, H. Chad, K. A. Anselm, C. Lenox, H. N. H. L. Holmes, B. G. Streetman, and J. C. Campbell, "Impact ionization characteristics of III-V semiconductors in a wide range of multiplication region thickness," IEEE J. Quantum Electron., vol. 36, pp. 198-204, 2000.
-
(2000)
IEEE J. Quantum Electron.
, vol.36
, pp. 198-204
-
-
Yuan, P.1
Chad, H.2
Anselm, K.A.3
Lenox, C.4
Holmes, H.N.H.L.5
Streetman, B.G.6
Campbell, J.C.7
-
9
-
-
0035844474
-
1-xAs avalanche photodiodes with high al concentration and thin multiplication region
-
1-xAs avalanche photodiodes with high al concentration and thin multiplication region," Appl. Phys. Lett., vol. 78, no. 24, pp. 3833-5, 2001.
-
(2001)
Appl. Phys. Lett.
, vol.78
, Issue.24
, pp. 3833-3835
-
-
Zheng, X.G.1
Sun, X.2
Wang, S.3
Yuan, P.4
Kinsey, G.S.5
Holmes A.L., Jr.6
Streetman, B.G.7
Campbell, J.C.8
-
10
-
-
0035396490
-
0.4As avalanche photodiodes
-
0.4As avalanche photodiodes," IEEE Tran. Electron Devices, vol. 48, no. 7, pp. 1310-7, 2001.
-
(2001)
IEEE Tran. Electron Devices
, vol.48
, Issue.7
, pp. 1310-1317
-
-
Tan, C.H.1
David, J.P.R.2
Plimmer, S.A.3
Rees, G.J.4
Tozer, R.C.5
Grey, R.6
-
11
-
-
0034424949
-
0.2As
-
0.2As," in Proc. 2000 IEEE Int. Symp. Compound Semiconductors, 2000, pp. 519-523.
-
(2000)
Proc. 2000 IEEE Int. Symp. Compound Semiconductors
, pp. 519-523
-
-
Ng, B.K.1
David, J.P.R.2
Tozer, R.C.3
Rees, G.J.4
Tan, C.H.5
Plimmer, S.A.6
Hopkinson, M.7
-
12
-
-
0002528786
-
Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio
-
F. Capasso, W. T. Tsang, A. L. Hutchinson, and G. F. Williams, "Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio," Appl. Phys. Lett., vol. 40, pp. 38-40, 1982.
-
(1982)
Appl. Phys. Lett.
, vol.40
, pp. 38-40
-
-
Capasso, F.1
Tsang, W.T.2
Hutchinson, A.L.3
Williams, G.F.4
-
13
-
-
0025404104
-
Realization of a staircase photodiode: Toward a solid-state photomultiplier
-
G. Ripamonti, F. Capasso, A. L. Hutchinson, D. J. Muehlner, J. F. Walker, and R. J. Malik, "Realization of a staircase photodiode: Toward a solid-state photomultiplier," Nuclear Instrum. Methods in Phys. Res., vol. A288, pp. 99-103, 1990.
-
(1990)
Nuclear Instrum. Methods in Phys. Res.
, vol.A288
, pp. 99-103
-
-
Ripamonti, G.1
Capasso, F.2
Hutchinson, A.L.3
Muehlner, D.J.4
Walker, J.F.5
Malik, R.J.6
-
14
-
-
0001049642
-
Avalanche photodiodes with an impact-ionization-engineered multiplication region
-
Nov.
-
P. Yuan, S. Wang, X. Sun, X. G. Zheng, A. L. Holmes Jr., and J. C. Campbell, "Avalanche photodiodes with an impact-ionization-engineered multiplication region," IEEE Photon. Technol. Lett., vol. 12, pp. 1370-72, Nov. 2000.
-
(2000)
IEEE Photon. Technol. Lett.
, vol.12
, pp. 1370-1372
-
-
Yuan, P.1
Wang, S.2
Sun, X.3
Zheng, X.G.4
Holmes A.L., Jr.5
Campbell, J.C.6
-
15
-
-
0034779596
-
Ultra-low-noise avalanche photodiodes
-
Jan.
-
J. C. Campbell, S. Wang, X. G. Zheng, G. S. Kinsey, A. L. Holmes Jr, X. Sun, R. Sidhu, and P. Yuan, "Ultra-low-noise avalanche photodiodes," Proc. SPIE, vol. 4283, pp. 480-488, Jan. 2001.
-
(2001)
Proc. SPIE
, vol.4283
, pp. 480-488
-
-
Campbell, J.C.1
Wang, S.2
Zheng, X.G.3
Kinsey, G.S.4
Holmes A.L., Jr.5
Sun, X.6
Sidhu, R.7
Yuan, P.8
-
16
-
-
0035678160
-
Low-noise avalanche photodiodes with graded impact-ionization-engineered multiplication region
-
S. Wang, R. Sidhu, X. G. Zheng, X. Li, X. Sun, A. L. Holmes Jr., and J. C. Campbell, "Low-noise avalanche photodiodes with graded impact-ionization-engineered multiplication region," IEEE Photon. Technol. Lett., vol. 13, pp. 1346-8, 2001.
-
(2001)
IEEE Photon. Technol. Lett.
, vol.13
, pp. 1346-1348
-
-
Wang, S.1
Sidhu, R.2
Zheng, X.G.3
Li, X.4
Sun, X.5
Holmes A.L., Jr.6
Campbell, J.C.7
-
17
-
-
0001646296
-
1-xAs/GaAs single heterostructures
-
1-xAs/GaAs single heterostructures," J. Appl. Phys., vol. 84, no. 8, pp. 4363-9, 1998.
-
(1998)
J. Appl. Phys.
, vol.84
, Issue.8
, pp. 4363-4369
-
-
Chia, C.K.1
David, J.P.R.2
Rees, G.J.3
Plimmer, S.A.4
Grey, R.5
Robson, P.N.6
-
18
-
-
18744375149
-
Monte Carlo simulation of low-noise avalanche photodiodes with heterojunctions
-
F. Ma, X. Li, S. Wang, K. A. Anselm, X. G. Zheng, A. L. Holmes Jr, and J. C. Campbell, "Monte Carlo simulation of low-noise avalanche photodiodes with heterojunctions," J. Appl. Phys., vol. 92, no. 8, pp. 4791-5.
-
J. Appl. Phys.
, vol.92
, Issue.8
, pp. 4791-4795
-
-
Ma, F.1
Li, X.2
Wang, S.3
Anselm, K.A.4
Zheng, X.G.5
Holmes A.L., Jr.6
Campbell, J.C.7
-
19
-
-
84922644221
-
Multiplication noise in uniform avalanche diodes
-
R. J. McIntyre, "Multiplication noise in uniform avalanche diodes," IEEE Trans. Electron Devices, vol. ED-13, 1966.
-
(1966)
IEEE Trans. Electron Devices
, vol.ED-13
-
-
McIntyre, R.J.1
-
20
-
-
0033169533
-
A new look at impact ionization-Part II: Gain and noise in short avalanche photodiodes
-
P. Yuan, K. A. Anselm, C. Hu, H. Nie, C. Lenox, A. L. Holmes, B. G. Streetman, J. C. Campbell, and R. J. McIntyre, "A new look at impact ionization-Part II: Gain and noise in short avalanche photodiodes," IEEE Trans. Electron Devices, vol. 46, pp. 1632-1639, 1999.
-
(1999)
IEEE Trans. Electron Devices
, vol.46
, pp. 1632-1639
-
-
Yuan, P.1
Anselm, K.A.2
Hu, C.3
Nie, H.4
Lenox, C.5
Holmes, A.L.6
Streetman, B.G.7
Campbell, J.C.8
McIntyre, R.J.9
-
21
-
-
0036999520
-
A study of low-bias photocurrent gradient of avalanche photodiodes
-
Dec.
-
S. Wang, R. Sidhu, G. Karve, F. Ma, X. Li, X. G. Zheng, J. B. Hurst, X. Sun, N. Li, A. L. Holmes Jr, and J. C. Campbell, "A study of low-bias photocurrent gradient of avalanche photodiodes," IEEE Trans. Electron Dev., vol. 49, Dec. 2002.
-
(2002)
IEEE Trans. Electron Dev.
, vol.49
-
-
Wang, S.1
Sidhu, R.2
Karve, G.3
Ma, F.4
Li, X.5
Zheng, X.G.6
Hurst, J.B.7
Sun, X.8
Li, N.9
Holmes A.L., Jr.10
Campbell, J.C.11
-
22
-
-
0037012067
-
Nonlocal impact ionization coefficients derived from Monte Carlo calculations
-
J. S. Marsland, "Nonlocal impact ionization coefficients derived from Monte Carlo calculations," Electron. Lett., vol. 38, no. 1, pp. 55-57, 2002.
-
(2002)
Electron. Lett.
, vol.38
, Issue.1
, pp. 55-57
-
-
Marsland, J.S.1
-
23
-
-
35949036921
-
Ionization coefficients in semiconductors: A nonlocal property
-
Y. Okuto and C. R. Crowell, "Ionization coefficients in semiconductors: A nonlocal property," Phys. Rev. B, vol. 10, pp. 4284-96, 1974.
-
(1974)
Phys. Rev. B
, vol.10
, pp. 4284-4296
-
-
Okuto, Y.1
Crowell, C.R.2
|