Low-dark-current low-voltage 1·3-1·6 μm avalanche photodiode with high-low electric field profile and separate absorption and multiplication regions by molecular beam epitaxy

Electronics Letters

Volumn 20, Issue 15, 1984, Pages 635-637

  Capasso, F ^a   Cho, A Y ^a   Foy, P W ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

Avalanche diodes; Photoelectric devices

Indexed keywords

SEMICONDUCTOR DIODES, AVALANCHE;

AVALANCHE PHOTODIODE; MOLECULAR BEAM EPITAXY;

SEMICONDUCTOR DIODES, PHOTODIODE;

EID: 0021463664     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19840437     Document Type: Article

References (4)

1. STILLMAN, G. E., COOK, L. W., BULMAN, G. E., TABATABAIE, N., CHIN, R., and DAPKUS, P. D.: ‘Long wavelength (1.3 to 1.6 µm) detectors for fiber optical communications’, IEEE Trans., 1982, ED-29, pp. 1355-1371
2. CAMPBELL, J. C., DENTAI, A. G., HOLDEN, W. S., and KASPER, B. L.: ‘High-performance avalanche photodiode with separate absorption, grading and multiplication regions’, Electron. Lett., 1983, 19, pp. 818-820
3. CAPASSO, F., ALAVI, K., CHO, A. Y., FOY, P. W., and BETHEA, C. G.: ‘Long wavelength, wide spectral response (0.8-1.8 µm) Al0.48In0.52As/Ga0.47In0.53As avalanche photodiodes and Al0.48In0.52As electroabsorption PIN avalanche detectors grown by molecular beam epitaxy’. Paper presented at the International Electron Device Meeting, Washington, D.C., 5-7 Dec. 1983, IEDM Technical Digest, p. 468
4. CAPASSO, F., ALAVI, K., CHO, A. Y., FOY, P. W., and BETHEA, C. G.: ‘New long wavelength Al0.48In0.52As/Ga0.47In0.53As avalanche photodiode grown by molecular beam epitaxy’, Appl. Phys. Lett., 1983, 43, pp. 1040-1042