Ionization rates and critical fields in 4H silicon carbide

Applied Physics Letters

Volumn 71, Issue 1, 1997, Pages 90-92

  Konstantinov, A O ^a   Wahab, Q ^a,b   Nordell, N ^a,c   Lindefelt, U ^a  

^a ABB CORPORATE RESEARCH   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

^c ACREO AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002622512     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119478     Document Type: Article

References (10)

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