A simple model for avalanche multiplication including deadspace effects

IEEE Transactions on Electron Devices

Volumn 46, Issue 4, 1999, Pages 769-775

  Flimmer, S A ^a   David, J P R ^a   Ong, D S ^a   Li, K F ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Avalanche diodes; Avalanche photodiodes; Hot carriers; Impact ionization; Monte Carlo methods; Power semiconductor devices

Indexed keywords

APPROXIMATION THEORY; AVALANCHE DIODES; BAND STRUCTURE; COMPUTER SIMULATION; ELECTRONS; HOT CARRIERS; IMPACT IONIZATION; PHONONS; PHOTODIODES; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING GALLIUM ARSENIDE;

AVALANCHE MULTIPLICATION; AVALANCHE PHOTODIODES; DEADSPACE EFFECTS; FULL BAND MONTE CARLO MODEL; PARABOLIC VALLEYS; SIMPLE MONTE CARLO MODEL;

MONTE CARLO METHODS;

EID: 0032662050     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.753712     Document Type: Article

References (26)

1. S. A. Flimmer, J. P. R. David, D. C. Herbert, T.-W. Lee, G. J. Rees, P. A. Houston, R. Grey, P. N. Robson, A. W. Higgs, and D. R. Wight, "Investigation of impact ionization in thin GaAs diodes," IEEE Trans. Electron Devices, vol. 43, pp. 1066-1072, July 1996.
2. K. F. Li, D. S. Ong, J. P. R. David, G. J. Rees, R. C. Tozer, P. N. Robson, and R. Grey, "Avalanche multiplication noise characteristics in thin GaAs p+-i-n+ diodes," IEEE Trans. Electron Devices, vol. 45, pp. 2102-2107, Oct. 1998.
3. D. S. Ong, K. F. Li, G. J. Rees, G. M. Dunn, J. P. R. David, and P. N. Robson, "A Monte Carlo investigation of multiplication noise in thin p+-i-n+ GaAs avalanche photodiodes," IEEE Trans. Electron Devices, vol. 45, pp. 1804-1810, Sept. 1998.
4. J. Bude and K. Hess, "Thresholds of impact ionization in semiconductors," J. Appl. Phys., vol. 72, pp. 3554-3561, 1992.
5. N. Sano, T. Aoki, and A. Yoshii, "Soft and hard thresholds in Si and GaAs," Appl. Phys. Lett., vol. 55, pp. 1418-1420, 1989.
6. M. Stobbe, R. Redmer, and W. Schattke, "Impact ionization rate in GaAs," Phys. Rev. B, vol. 49, pp. 4494-4497, 1994.
7. H. K. Jung, K. Taniguchi, and C. Hamaguchi, "Impact ionization model for full band Monte Carlo simulation in GaAs," J. Appl. Phys., vol. 59, pp. 2473-2480, 1996.
8. J. Y. Tang and K. Hess, "Impact ionization of electrons in silicon (steady state)," J. Appl. Phys., vol. 54, pp. 5139-5151, 1983.
9. O. Mouton, J. L. Thobel, and R. Fauquemberque, "Monte Carlo simulation of high field electron transport in GaAs using an analytical band-structure model,"/ Appl. Phys., vol. 81, pp. 3160-3169, 1996.
10. B. K. Ridley, "Lucky-drift mechanism for impact ionization in semiconductors," J. Phys. C: Solid State Phys., vol. 16, pp. 3373-3388, 1983.
11. B. K. Ridley, "A model for impact ionization in wide-gap semiconductors," J. Phys. C: Solid State Phys., vol. 16, pp. 4733-1751, 1983.
12. J. Marsland, C. Woods, and C. Brownhill, "Lucky-drift estimation of excess noise factor for conventional avalanche photodiodes including the dead space effect," IEEE Trans. Electron Devices, vol. 38, pp. 1129-1135, May 1992.
13. S. P. Wilson, S. Brand, and R. A. Abram, "Avalanche multiplication properties of GaAs calculated from spatially transient ionization coefficients," Solid State Electron., vol. 38, pp. 2095-2100, 1995.
14. S. Tanaka, "A Lucky-drift model, including a soft threshold energy, for the relation between gate and substrate currents in MOSFET's," Solid State Electron., vol. 32, pp. 935-946, 1989.
15. S. A. Plimmer, J. P. R. David, and G. M. Dunn, "Spatial limitations to the application of the Lucky-drift theory of impact ionization," IEEE Trans. Electron Devices, vol. 44, pp. 659-663, Apr. 1997.
16. B. E. A. Saleh, M. M. Hayat, and M. C. Teich, "Effect of deadspace on the excess noise factor and time response of avalanche photodiodes," IEEE Trans. Electron Devices, vol. 37, pp. 1976-1984, Sept. 1990.
17. M. M. Hayat, B. E. A. Saleh, and M. C. Teich, "Effect of dead space on gain and noise of double-carrier-multiplication avalanche photodiodes," IEEE Trans. Electron Devices, vol. 39, pp. 546-552, Mar. 1992.
18. M. M. Hayat, W. L. Sargeant, and B. E. A. Saleh, "Effect of dead space on gain and noise in Si and GaAs avalanche photodiodes," IEEE J. Quantum Electron., vol. 28, pp. 1360-1365, May 1992.
19. P. G. Scrobhaci and T.-W. Tang, "Modeling of the hot electron subpopulation and its application to impact ionization in submicron silicon devices-Part I: Transport equations," IEEE Trans. Electron Devices, vol. 41, pp. 1197-1205, July 1994.
20. L. V. Keldysh, "Kinetic theory of impact ionization in semiconductors," Sov. Phys.-JETP, vol. 10, pp. 509-518, 1960.
21. J. Allam, "Universal dependence of breakdown voltage: Choosing materials for high power applications," Jpn. J. Appl. Phys., vol. 36, pp. 15-29, 1997.
22. R. M. Flitcroft, P. A. Houston, J. P. R. David, and C. Button, "Avalanche multiplication in GalnP/GaAs single heterostructure bipolar transistors, IEEE Trans. Electron Devices, vol. 45, pp. 1207-1212, June 1998.
23. R. J. Mclntyre, "Multiplication noise in uniform avalanche photodiodes," IEEE Trans. Electron Devices, vol. ED-13, pp. 164-168, Jan. 1966.
24. + diodes," IEEE Trans. Electron Devices, vol. 43, pp. 2203-2305, Dec. 1996.
25. M. V. Fiscetti, "Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blends structures-Part I: Homogeneous transport," IEEE Trans. Electron Devices, vol. 38, pp. 634-649, Mar. 1992.
26. A. Spinelli and A. L. Lacaita, "Mean gain of avalanche photodiodes in a dead space model," IEEE Trans. Electron Devices, vol. 43, pp. 23-30, Jan. 1996.