Excess noise characteristics of Al0.8Ga0.2As avalanche photodiodes

IEEE Photonics Technology Letters

Volumn 14, Issue 4, 2002, Pages 522-524

  Ng, B K ^b   David, J P R ^a,b   Tozer, R C ^a,b   Hopkinson, M ^b   Hill, G ^b   Rees, G J ^b  

^a IEEE

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Al0.8Ga0.2As; APD; Avalanche excess noise; Avalanche multiplication; Impact ionization; Indirect hand gap

Indexed keywords

AVALANCHE DIODES; BANDWIDTH; ENERGY GAP; IMPACT IONIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SIGNAL TO NOISE RATIO; SPURIOUS SIGNAL NOISE;

AVALANCHE MULTIPLICATION; INDIRECT BAND GAPS;

PHOTODIODES;

EID: 0036538892     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.992598     Document Type: Article

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