Low dark current GaN avalanche photodiodes

IEEE Journal of Quantum Electronics

Volumn 36, Issue 12, 2000, Pages 1389-1391

  Yang, B ^a   Li, T ^a   Heng, K ^a   Collins, C ^a   Wang, S ^a   Carrano, J C ^a   Dupuis, R D ^a   Campbell, J C ^a   Schurman, M J ^b   Ferguson, I T ^b  

^a The University of Texas at Austin   (United States)

^b EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOCURRENTS; PHOTODIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS;

AVALANCHE BREAKDOWN; AVALANCHE PHOTODIODES; DARK CURRENT; PHOTORESPONSE;

AVALANCHE DIODES;

EID: 0034485186     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.892557     Document Type: Article

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