Avalanche multiplication and breakdown in Gao.52lno.4sP diodes

IEEE Transactions on Electron Devices

Volumn 45, Issue 10, 1998, Pages 2096-2101

  Ghin, R ^a   David, J P R ^a   Flimmer, S A ^a   Hopkinson, M ^a   Rees, G J ^b   Herbert, D C ^b   Wight, D R ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; IONIZATION OF SOLIDS; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

PHOTOMULTIPLICATION CHARACTERISTICS;

AVALANCHE DIODES;

EID: 0032187954     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.725241     Document Type: Article

References (19)

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