Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes

Applied Physics Letters

Volumn 90, Issue 14, 2007, Pages

  McClintock, R ^a   Pau, J L ^a   Minder, K ^a   Bayram, C ^a   Kung, P ^a   Razeghi, M ^a  

^a Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC FIELD MEASUREMENT; ELECTRON INJECTION; GALLIUM NITRIDE; HOLE MOBILITY; LIGHTING; SEMICONDUCTOR JUNCTIONS;

ELECTRON IONIZATION COEFFICIENT; HOLE IONIZATION COEFFICIENT;

AVALANCHE PHOTODIODES;

EID: 34047263977     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2720712     Document Type: Article

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