Avalanche multiplication in InAlAs

IEEE Transactions on Electron Devices

Volumn 54, Issue 1, 2007, Pages 11-16

  Goh, Y L ^a   Massey, D J ^a   Marshall, A R J ^a   Ng, J S ^a   Tan, C H ^a   Ng, W K ^a,b   Rees, G J ^a   Hopkinson, M ^a   David, J P R ^a   Jones, S K ^c  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b Agilent Technologies   (Malaysia)

^c Bookham Technology plc   (United Kingdom)

Author keywords

Avalanche photodiodes (APDs); Impact ionization; Ionization coefficients; Multiplication

Indexed keywords

AVALANCHE DIODES; ELECTRIC BREAKDOWN; ELECTRON TUNNELING; IMPACT IONIZATION; MATHEMATICAL MODELS; PHOTODIODES;

AVALANCHE PHOTODIODES; IONIZATION COEFFICIENTS; MULTIPLICATION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33846060624     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.887229     Document Type: Article

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