Catalyst-free growth of ZnO nanorods and their nanodevice applications

International Journal of Nanotechnology

Volumn 3, Issue 2-3, 2006, Pages 372-395

  Park, Won Il ^a   Kim, Dong Wook ^a   Jung, Sug Woo ^a   Yi, Gyu Chul ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Catalyst free growth; Field effect transistor; Light emitting device; Nanodevice; Nanorod; Schottky diode; Sensor; ZnO

Indexed keywords

CATALYSTS; CHEMICAL SENSORS; CHEMICAL VAPOR DEPOSITION; EXCITONS; FIELD EFFECT TRANSISTORS; LIGHT EMITTING DIODES; SCHOTTKY BARRIER DIODES; ZINC OXIDE;

CATALYST-FREE GROWTH; CRYSTALLINE NANOSTRUCTURES; NANODEVICES; NANOROD;

NANOSTRUCTURED MATERIALS;

EID: 33745648500     PISSN: 14757435     EISSN: None     Source Type: Journal    
DOI: 10.1504/ijnt.2006.009589     Document Type: Article

References (146)

1. Lieber, C.M. (2003) MRS Bull., Vol. 28, p.486.
2. Law, M., Goldberger, J. and Yang, P. (2004) Annu. Rev. Mater. Sci., Vol. 34, p.83.
3. Yi, G-C., Wang, C. and Park, W.I. (2005) Semicond. Sci. Technol., Vol. 20, p.S22.
4. Bachtold, A., Hadley, P., Nakanishi, T. and Dekker, C. (2001) Science, Vol. 294, p. 1317.
5. Park, W.I., Kim, J.S., Yi, G-C. and Lee, H-J. (2005) Adv. Mater., Vol. 17, p.1393.
6. Samuelson, L. (2003) Mater. Today, Vol. 6, p.22.
7. Melosh, N.A., Boukai, A., Diana, F., Gerardot, B., Badolato, A., Petroff, P.M. and Heath J.R. (2003) Science, Vol. 300, p.112.
8. Park, W.I. and Yi, G-C. (2004) Adv. Mater., Vol. 16, p.87.
9. Kim, H-M., Cho, Y-H., Lee, H., Kim, S.I., Ryu, S.R., Kim, D.Y., Kang, T.W. and Chung, K.S. (2004) Nano Lett, Vol. 4, p. 1059.
10. Huang, M.H., Mao, S., Feick, H., Yan, H., Wu, Y., Kind, H., Weber, E., Russo, R. and Yang, P. (2001) Science, Vol. 292, p. 1897.
11. Wang, Z.L. (2004) Mater. Today, Vol. 7, p.26.
12. Heo, Y.W., Norton, D.P., Tien, L.C., Kwon, Y., Kang, B.S., Ren, F., Pearton, S.J. and LaRoche, J.R. (2004) Mater. Sci. Eng. R., Vol. 47, p.1.
13. Yu, S.F. Yuen, C., Lau, S.P., Park, W.I. and Yi, G-C. (2004) Appl. Phys. Lett., Vol. 84, p.3241.
14. Hong, S., Joo, T., Park, W.I., Jun, Y.H. and Yi, G-C. (2003) Appl. Phys. Lett., Vol. 83, p.4157.
15. Liang, W.Y. and Yoffe, A.D. (1968) Phys. Rev. Lett., Vol. 20, p.59.
16. Zu, P., Tang, Z.K., Wong, G.K.L., Kawasaki, M., Ohtomo, A., Koinuma, H. and Segawa, Y. (1997) Solid State Commun., Vol. 103, p.459.
17. (a) Bai, X.D., Gao, P.X., Wang, Z.L. and Wang, E.G. (2003) Appl. Phys. Lett., Vol. 82, p.4806.
18. (b) Hughes, W.L. and Wang, Z.L. (2003) Appl. Phys. Lett., Vol. 82, p.2886.
19. Park, W.I., Kim, D.H., Jung, S-W. and Yi, G-C. (2002) Appl. Phys. Lett., Vol. 80, p.4232.
20. Park, W.I., Jun, Y.H., Jung S.W. and Yi, G-C. (2003) Appl. Phys. Lett., Vol. 82, p.964.
21. Park, W.I., Yi, G-C., Kim, M. and Pennycook, S.J. (2002) Adv. Mater., Vol. 14, p.1841.
22. Park, W.I., Yi, G-C., Kim, M. and Pennycook, S.J. (2003) Adv. Mater., Vol. 15, p.526.
23. Peng, X.G., Wickham, J. and Alivisatos, A.P. (1998) J. Am. Chem. Soc., Vol. 120, p.5343.
24. Wagner, R.S. and Ellis, W.C. (1964) Appl. Phys. Lett., Vol. 4, p.89.
25. Klimovskaya, A.I., Ostrovskii, I.P. and Ostrovskaya, A.S. (1996) Phys. Status Solidi A, Vol. 153, p.465.
26. Toshio, O. and Masayuki, N. (1979) J. Cryst. Growth, Vol. 46, p.504.
27. Iwao, Y. and Hajime, S.J. (1978) J. Cryst. Growth, Vol. 45, p.511.
28. Trentler, T.J., Hickman, K.M., Goel, S.C., Viano, A.M., Gibbons, P.C. and Buhro, W.E. (1995) Science, Vol. 270, p.1791.
29. Chen, C.C. and Yeh, C.C. (2000) Adv. Mater., Vol. 12, p.738.
30. Hu, J.Q., Li, Q., Wong, N.B., Lee, C.S. and Lee, S.T. (2002) Chem. Mater., Vol. 14, p.1216.
31. Yu, D.P., Sun, X.S., Lee, C.S., Bello, I., Lee, S-T., Gu, H.D., Leung, K.M., Zhou, G.W., Dong, Z.F. and Zhang, Z. (1998) Appl. Phys. Lett., Vol. 72, p.1966.
32. (a) Morales, A.M. and Lieber, C.M. (1998) Science, Vol. 279, p.208.
33. (b) Duan, X.F. and Lieber, C.M. (2000) J. Am. Chem. Soc., Vol. 122, p.188.
34. Zhang, R-Q. Lifshitz, Y. and Lee, S-T. (2003) Adv. Mater., Vol. 15, p.635.
35. Han, W.Q., Fan, S.S., Li, Q.Q. and Hu, Y.D. (1997) Science, Vol. 277, p.1287.
36. Trentler, T.J., Goel, S.C., Hickman, K.M., Viano, A.M., Chiary, M.Y., Beatly, A.M., Gibbons, P.C. and Buhro, W.E. (1997) J. Am. Chem. Soc., Vol. 119, p.2172.
37. Trentler, T.J., Hickman, K.M., Goel, S.C., Viano, A.M., Gibbons, P.C., Buhro, W.E. (1995) Science, Vol. 270, p.1791.
38. Yazawa, M., Koguchi, M., Muto, A., Ozawa, M. and Hiruma, K. (1992) Appl. Phys. Lett., Vol. 61, p.2051.
39. Ohlsson, B.J., Björk, M.T., Magnusson, M.H., Deppert, K., Samuelson, L. and Wallenberg, L.R. (2001) Appl. Phys. Lett., Vol. 79, p.3335.
40. Kim, H. and Sigmund, W. (2002) Appl. Phys. Lett., Vol. 81, p.2085.
41. Pan, Z.W., Dai, Z.R. and Wang, Z.L. (2001) Science, Vol. 291, p.1947.
42. Li, Y.B., Bando, Y., Sato, T. and Kurashima, K. (2002) Appl. Phys. Lett., Vol. 81, p.144.
43. (a) Yu, W.D., Li, X.M. and Gao, X.D. (2004) Appl. Phys. Lett., Vol. 84, p.2658.
44. (b) Wang, C.R., Tang, K.B., Yang, Q., Hai, B., Shen, G.Z., An, C.H., Yu, W.C. and Qian, Y.T. (2001) Inorg. Chem. Commun., Vol. 4, p.339.
45. Lao, J.Y., Huang, J.Y., Wang, D.Z. and Ren, Z.F. (2003) Nano Lett, Vol. 3, p.235.
46. Fank, F.C. (1949) Discuss. Faraday Soc., Vol. 5, p.48.
47. Dai, Z.R., Pan, Z.W. and Wang, Z.L. (2003) Adv. Funct. Mater., Vol. 13, p.9.
48. Park, W.I., An, S.J., Yi, G-C. and Jang, H.M. (2001) J. Mater. Res., Vol. 16, p.1358.
49. Park, W.I. and Yi, G-C. (2001) J. Electron. Mater., Vol. 30, p.L32.
50. Park, W.I., Yi, G-C. and Jang, H.M. (2001) Appl. Phys. Lett., Vol. 79, p.2022.
51. (a) Kim, S-W., Kotani, T., Ueda, M., Fujita, S. and Fujita, S. (2003) Appl. Phys. Lett., Vol. 83, p.3593.
52. (b) Kim, S-W., Fujita, S. and Fujita, S. (2002) Appl. Phys. Lett., Vol. 81, p.5036.
53. Baxter, J.B. and Aydil, E.S. (2005) J. Cryst. Growth, Vol. 274, p.407.
54. Jeong, M.C., Oh, B.Y., Lee, W. and Myoung, J.M. (2004) J. Cryst. Growth, Vol. 268, p.149.
55. Liu, X., Wu, X.H., Cao, H. and Chang, R.P.H. (2004) J. Appl. Phys., Vol. 95, p.3141.
56. Ogata, K, Maejima, K., Fujita, S. and Fujita, S. (2003) J. Cryst. Growth, Vol. 248, p.25.
57. Kim, K.S. and Kim, H.W. (2003) Physica B, Vol. 328, p.368.
58. Jie, J., Wang, G., Chen, Y., Han, X., Wang, Q., Xu, B. and Hou, J.G. (2005) Appl. Phys. Lett., Vol. 86, p.031909.
59. Zhang, B.P., Binh, N.T., Segawa, Y., Wakatsuki, K. and Usami, N. (2003) Appl. Phys. Lett., Vol. 83, p. 1635.
60. Tran, N.H., Hartmann, A.J. and Lamb, R.N. (1999) J. Phys. Chem. B, Vol. 103, p.4264.
61. Wu, Z., Zhou, Y. and Zhang, X. (2004) Appl. Phys. Lett., Vol. 84, p.4442.
62. Han, S-W., Yoo, H-J., An, S.J., Yoo, J. and Yi, G-C. (2005) Appl. Phys. Lett., Vol. 86, p.021917.
63. Wander, A. and Harrison, N.M. (2000) Surf. Sci., Vol. 468, p.L851.
64. Wander, A. and Harrison, N.M. (2000) Surf. Sci., Vol. 467, p.L342.
65. Wander, A., Schedin, F., Steadman, P., Norris, A., McGrath, R., Turner, T.S., Thornton, G. and Harrison, N.M. (2001) Phys. Rev. Lett., Vol. 86, p.3811.
66. Dai, Z.R., Pan, Z.W. and Wang, Z.L. (2001) Solid State Commun., Vol. 118, p.351.
67. Liang, C., Meng, G., Lei, Y., Phillipp, F. and Zhang, L. (2001) Adv. Mater., Vol. 13, p.1330.
68. Bebb, H.B. and Williams, E.W. (1972) Semiconductors and Semimetals, Academic, New York, Vol. 8, pp.203-207.
69. Gilliland, G.D. (1997) Mater. Sci. Eng. R, Vol. 18, p.99.
70. Bagnall, D.M., Chen, Y.F., Zhu, Z., Yao, T., Shen, M.Y. and Goto, T. (1998) Appl. Phys. Lett., Vol. 73, p.1038.
71. Yang, Z.K., Yu, P., Wong, G.K.L., Kawasaki, M., Ohtomo, A., Koinuma, H. and Segawa, Y. (1997) Solid State Commun., Vol. 103, p.459.
72. Makino, T., Chia, C.H., Tuan, N.T., Segawa, Y., Kawasaki, M., Ohtomo, A., Tamura, K. and Koinuma, H. (2000) Appl. Phys. Lett., Vol. 76, p.3549.
73. Jung, S.W., Park, W.I., Cheong, H.D., Yi, G-C., Jang, H.M., Hong, S. and Joo, T. (2002) Appl. Phys. Lett., Vol. 80, p.1924.
74. Reynolds, D.C., Look, D.C., Jogai, B., Litton, C.W., Collins, T.C., Harsch, W. and Cantwell, G. (1998) Phys. Rev. B, Vol. 57, p.12151.
75. Guo, L., Yang, S., Yang, C., Yu, P., Wang, J., Ge, W. and Wong, G.K.L. (2000) Appl. Phys. Lett., Vol. 76, p.2901.
76. Mahamuni, S., Borgohain, K., Bendre, B.S., Leppert, V. and Risbud, S.H. (1999) J. Appl. Phys., Vol. 85, p.2861.
77. van Dijken, A., Meukenkamp, E.A., Vanmaekelbergh, D. and Meijerink, A. (2000) J. Luminescence, Vol. 87, p.454.
78. Zhang, B.P., Binh, N.T., Segawa, Y., Kashiwaba, Y. and Haga, K. (2004) Appl. Phys. Lett., Vol. 84, p.586.
79. Senger, R.T. and Bajaj, K.K. (2003) Phys. Rev. B, Vol. 68, p.045313.
80. Wang, X., Ding, Y., Summers, C.J. and Wang, Z.L. (2004) J. Phys. Chem. B, Vol. 108, p.8773.
81. Park, W.I., Yoo, J. and Yi, G-C. (2005) J. Korean Phys. Soc., Vol. 46, p.L1067.
82. Gudiksen, M.S., Lauhon, L.J., Wang, J., Smoth, D.C. and Lieber, C.M. (2002) Nature, Vol. 415, p.617.
83. Wu, Y.Y., Fan, R. and Yang, P. (2002) Nano Lett, Vol. 2, p.83.
84. Björk, M.T., Ohlsson, B.J., Sass, T., Persson, A.I., Thelander, C., Magnusson, M.H., Deppert, K., Wallenberg, L.R. and Samuelson, L. (2002) Appl. Phys. Lett., Vol. 80, p.1058.
85. Solanki, R., Huo, J., Freeouf, J.L. and Miner, B. (2002) Appl. Phys. Lett., Vol. 81, p.3864.
86. Yatsui, T., Lim, J., Ohtsu, M., An, S.J. and Yi, G-C. (2004) Appl. Phys. Lett., Vol. 85, p.727.
87. Lauhon, L.J., Gudiksen, M.S., Wang, C.L. and Lieber, C.M. (2002) Nature, Vol. 420, p.57.
88. (a) Chen, C-C., Yeh, C-C., Liang, C-H., Lee, C-C., Chen, C-H., Yu, M-Y., Liu, H-L., Chen, L-C., Lin, Y-S., Ma, K-J. and Chen, K-H. (2001) J. Phys. Chem. Solids, Vol. 62, p.1577.
89. (b) Han, W. and Zettl, A. (2002) Adv. Mater., Vol. 14, p.1560.
90. Zhang, H.F., Wang, C.M. and Wang, L.S. (2002) Nano Lett, Vol. 2, p.941.
91. Lin, H-M., Chen, Y-L., Yang, J., Liu, Y-C., Yin, K-M., Kai, J-J., Chen, F-R., Chen, L-C., Chen, Y-F. and Chen, C-C. (2003) Nano Lett, Vol. 3, p.537.
92. Hu, J., Bando, Y., Liu, Z., Sekiguchi, T., Golberg, D. and Zhan, J. (2003) J. Am. Chem. Soc., Vol. 125, p.11306.
93. Choi, H-J., Johnson, J.C., He, R., Lee, S-K., Kim, F., Pauzauskie, P., Goldberger, J., Saykally, R.J. and Yang, P. (2003) J. Phys. Chem. B, Vol. 107, p.8721.
94. (a) Kittel, C. (1996) Introduction to Solid-State Physics, 7th ed., Wiley & Sons, New York.
95. (b) Peter, S.Z. (1993) Quantum Well Laser, Academic Press, San Diego.
96. (a) Min, B., Lee, J.S., Hwang, J.W., Keem, K.H., Kang, M.I., Cho, K., Sung, M.Y., Kim, S., Lee, M.S., Park, S.O. and Moon, J.T. (2003) J. Cryst. Growth, Vol. 252, p.565.
97. (b) Hwang, J., Min, B., Lee, J.S., Keem, K., Cho, K., Sung, M.Y., Lee, M.S. and Kim, S. (2004) Adv. Mater., Vol. 16, p.422.
98. Heo, Y.W., Kaufman, M., Pruessner, K., Siebein, K.N., Norton, D.P. and Ren, F. (2005) Appl. Phys. A, Vol. 80, p.263.
99. Park, W.I., An, S.J., Yi, G-C. and Kim, M. (2004) Third IEEE Conference on Nanotechnology, Audiumax-TU Munchen Munich, Germany, 17-19 August.
100. Segnit, E.R. and Holland, A.L. (1965). J. Am. Ceram. Soc., Vol. 48, p.412.
101. An, S.J., Park, W.I., Yi, G-C., Kim, Y.J., Kang, H.B. and Kim, M. (2004) Appl. Phys. Lett., Vol. 84, p.3612.
102. Park, W.I., Jung, S.W., Yi, G-C., Oh, S.H., Park, C.G. and Kim, M. (2002) Jpn. J. Appl. Phys. Vol. 41, p.L1206.
103. Schoening, M. and Poghossian, A. (2002) Analyst, Vol. 127, p.1137.
104. Choi, W.B., Chu, J.U., Jeong, K.S., Bae, E.J., Lee, J-W., Kim, J-J. and Lee, J-O. (2001) Appl. Phys. Lett., Vol. 79, p.3696.
105. (a) Li, J., Stevens, R., Delzeit, L., Ng, H.T., Cassell, A., Han, J. and Meyyappan, M. (2002) Appl. Phys. Lett., Vol. 81, p.910.
106. (b) Ng, H.T., Han, J., Yamada, T., Nguyen, P., Chen, Y.P. and Meyyappan, M. (2004) Nano Lett, Vol. 4, p.1247.
107. Fan, Z., Wang, D., Chang, P-C., Tseng, W-Y. and Lu, J.G. (2004) Appl. Phys. Lett., Vol. 85, p.5923.
108. Awschalom, D.D., Loss, D. and Samarth, N. (2002) NanoScience and Technology, Springer, Berlin.
109. Ohring, M. (1992) The Materials Science of Thin Films, Academic Press, San Diego, Chapters.
110. Jung, S.W., Park,W.I., Kim, M. and Yi, G-C. (2003) Adv. Mater., Vol. 15, p.1358.
111. Zhao, Z., Wang, H., Wang, B., Hou, J.G., Liu, G.L. and Jin, X.F. (2002) Phys. Rev. B, Vol. 65, p.235413.
112. Moritz, J., Dieny, B., Nozières, J.P., van de Veerdonk, R.J.M., Crawford, T.M., Weller, D. and Landis, S. (2005) Appl. Phys. Lett., Vol. 86, p.63512.
113. Deng, Z., Yenilmez, E., Leu, J., Hoffman, J.E., Straver, E.W.J., Dai, H. and Moler, K.A. (2004) Appl. Phys. Lett., Vol. 85, p.6263.
114. Cui, H., Kalinin, S.V., Yang, X. and Lowndes, D.H. (2004) Nano Lett, Vol. 4, p.2157.
115. Dietl, T., Ohno, H., Matsukura, F., Gilbert, J. and Ferrand, D. (2000) Science, Vol. 287, p.1019.
116. Jung, S.W. An, S-J., Yi, G-C., Jung, C.U., Lee, S.I. and Cho, S. (2002) Appl. Phys. Lett., Vol. 80, p.4561.
117. Ueda, K., Tabata, H. and Kawai, T. (2001) Appl. Phys. Lett., Vol. 79, p.988.
118. Wu, J-J. Liu, S-C. and Yang, M-H. (2004) Appl. Phys. Lett., Vol. 85, p.1027.
119. Kim, D.H., Yang, J.S., Lee, K.W., Bu, S.D., Kim, D-W., Noh, T.W., Oh, S.J., Kim, Y.W., Chung, J.S., Tanaka, H., Lee, H.Y., Kawai, T., Won, J.J., Park, S.H. and Lee, J.C. (2003) J. Appl. Phys., Vol. 93, p.6125.
120. Toyosaki, H., Fukumura, T., Yamada, Y., Nakijima, K., Chikyow, T., Hasegawa, T., Koinuma, H. and Kawasaki, M. (2004) Nature Mater., Vol. 3, p.221.
121. Javey, A., Guo, J., Wang, Q., Lundstrom, M. and Dai, H. (2003) Nature, Vol. 424, p.654.
122. Park, W.I., Kim, J.S., Yi, G-C., Bae, M.H. and Lee, H-J. (2004) Appl. Phys. Lett., Vol. 85, p.5052.
123. Arnold, M.S., Avouris, P., Pan, Z.W. and Wang, Z.L. (2003) J. Phys. Chem. B, Vol. 107, p.659.
124. Heo, Y.W., Tien, L.C., Kwon, Y., Norton, D.P., Pearton, S.J., Kang, B.S. and Ren, F. (2004) Appl. Phys. Lett., Vol. 85, p.2274.
125. Goldberger, J., Sirbuly, D.J., Law, M. and Yang, P. (2005) J. Phys. Chem. B, Vol. 109, p.9.
126. Kaidashev, E.M., Lorenz, M., Wenckstern, H., Rahm, A., Semmelhack, H-C., Han, K-H., Benndorf, G., Bundesmann, C., Hochmuth, H. and Grundmann, M. (2003) Appl. Phys. Lett., Vol. 82, p.3901.
127. Wang, D., Wang, Q., Javey, A., Tu, R., Dai, H., Kim, H., McIntyre, P.C., Krishnamohan, T. and Saraswat, K.C. (2003) Appl. Phys. Lett., Vol. 83, p.2432.
128. Masum, J., Parmiter, P., Hall, T.J. and Crouch, M. (1996) IEE Proc.-G: Circuits, Devices Syst., Vol. 143, p.307.
129. Xiong, Y.Z., Ng, G-I., Wang, H. and Fu, J.S. (2001) IEEE Trans. Electron. Dev., Vol. 48, p.2192.
130. Liu, M. and Kim, H.K. (2004) Appl. Phys. Lett., Vol. 84, p.173.
131. Lagowski, L., Sproles Jr., E.S. and Gatos, H.C. (1977) J. Appl. Phys., Vol. 48, p.3566.
132. Li, Q.H., Wan, Q., Liang, Y.X. and Wang, T.H. (2004) Appl. Phys. Lett., Vol. 84, p.4556.
133. Vetury, R., Zhang, N.Q., Keller, S. and Mishra, U.K. (2001) IEEE Trans. Electron. Dev., Vol. 48, p.560.
134. Tang, T., Liu, X., Li, C., Lei, B., Zhang, D., Rouhanizadeh, M., Hsiai, T. and Zhoua, C. (2005) Appl. Phys. Lett., Vol. 86, p.103903.
135. Heo, Y.W., Tien, L.C., Norton, D.P., Kang, B.S., Ren, F., Gila, B.P. and Pearton, S.J. (2004) Appl. Phys. Lett., Vol. 85, p.2002.
136. Kaminishi, D., Ozaki, H., Ohno, Y., Maehashi, K., Inoue, K., Matsumoto, K., Seri, Y., Masuda, A. and Matsumura, H. (2005) Appl. Phys. Lett., Vol. 86, p.113115.
137. (a) Wan, Q., Li, Q.H., Chen, Y.J., Wang, T.H., He, X.L., Gao, X.G. and Li, J.P. (2004) Appl. Phys. Lett., Vol. 84, p.3085.
138. (b) Wan, Q., Li, Q.H., Chen, Y.J., Wang, T.H., He, X.L. and Li, J.P. (2004) Appl. Phys. Lett., Vol. 84, p.3654.
139. Kang, B.S., Ren, F., Heo, Y.W., Tien, L.C., Norton, D.P. and Pearton, S.J. (2005) Appl. Phys. Lett., Vol. 86, p.112105.
140. Kim, J.S., Park, W.I. and Yi, G-C. (2005) The 12th Korean Conference on Semiconductors, Vol. 2, p.369.
141. Yang, X., Guillorn, M.A., Austin, D., Melechko, A.V., Cui, H., Meyer, H.M., III, Merkulov, V.I., Caughman, J.B.O., Lowndes, D.H. and Simpson, M.L. (2003) Nano Lett, Vol. 3, p. 1751.
142. Li, J., Stevens, R., Delzeit, L., Ng, H.T., Cassell, A., Han, J. and Meyyappan, M. (2002) Appl. Phys. Lett., Vol. 81, p.910.
143. Duesberg, G.S., Graham, A.P., Liebau, M., Seidel, R., Unger, E., Kreupl, F. and Hoenlein, W. (2003) Nano Lett, Vol. 3, p.257.
144. Gangloff, L., Minoux, E., Teo, K.B.K., Vincent, P., Semet, V., Binh, V.T., Yang, M.H., Lacerda, R.G., Bu, I.Y.Y., Pirio, G., Schnell, J.P., Pribat, D., Hasko, D.G., Amaratunga, G.A.J., Milne, W.I. and Legagneux, P. (2004) Nano Lett, Vol. 4, p.1575.
145. Park, W.I., Yi, G-C., Kim, J-W. and Park, S.M. (2003) Appl. Phys. Lett., Vol. 82, p.4358.
146. Könenkamp, R., Word, R.C. and Schlegel, C. (2004) Appl. Phys. Lett., Vol. 85, p.6004.