DC and microwave noise transient behavior of InP/InGaAs double heterojunction bipolar transistor (DHBT) with polyimide passivation

IEEE Transactions on Electron Devices

Volumn 48, Issue 10, 2001, Pages 2192-2197

  Xiong, Yong Zhong ^a,b   Ng, Geok Ing ^a,b   Wang, Hong ^a,b   Fu, J S ^a,b  

^a IEEE   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

InP HBT; Noise figure; Noise transient; Polyimide

Indexed keywords

DOUBLE HETEROJUNCTION BIPOLAR TRANSISTOR; MICROWAVE NOISE TRANSIENT; SURFACE POTENTIAL;

ELECTRON TRAPS; PASSIVATION; POLYIMIDES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSIENTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035471931     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.954453     Document Type: Article

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