Influence of growth conditions on morphology, composition, and electrical properties of n-Si wires

Physica Status Solidi (A) Applied Research

Volumn 153, Issue 2, 1996, Pages 465-472

  Klimovskaya, A I ^a   Ostrovskii, I P ^a   Ostrovskaya, A S ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b LVIV POLYTECHNIC NATIONAL UNIVERSITY   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COMPOSITION; CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON MICROSCOPY; LIGHT EMISSION; MASS SPECTROMETRY; MORPHOLOGY; POROUS SILICON; SEMICONDUCTING SILICON; THERMAL EFFECTS; X RAY ANALYSIS;

ELECTROCONDUCTIVITY; GAS PHASE REACTIONS; X RAY MICROPROBE ANALYSIS;

CRYSTAL GROWTH;

EID: 0030079888     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.2211530221     Document Type: Article

References (7)

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