Heteroepitaxal fabrication and structural characterizations of ultrafine GaN/ZnO coaxial nanorod heterostructures

Applied Physics Letters

Volumn 84, Issue 18, 2004, Pages 3612-3614

  An, Sung Jin ^a   Park, Won Il ^a   Yi, Gyu Chul ^a   Kim, Yong Jin ^b   Kang, Hee Bok ^b   Kim, Miyoung ^c  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b LG Siltron Inc   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRON DIFFRACTION; FAST FOURIER TRANSFORMS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LATTICE CONSTANTS; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; STACKING FAULTS; STRAIN; SYNCHROTRON RADIATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

FIELD-EMISSION SCANNING ELECTRON MICROSCOPY (FESEM); HETEROEPITAXIAL FABRICATION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM); NANOROD HETEROSTRUCTURES;

HETEROJUNCTIONS;

EID: 2542500676     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1738180     Document Type: Article

References (10)

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