Anomalous Hall effect governed by electron doping in a room-temperature transparent ferromagnetic semiconductor

Nature Materials

Volumn 3, Issue 4, 2004, Pages 221-224

  Toyosaki, Hidemi ^a   Fukumura, Tomoteru ^a   Yamada, Yasuhiro ^a   Nakajima, Kiyomi ^b,c   Chikyow, Toyohiro ^b,c   Hasegawa, Tetsuya ^c,d   Koinuma, Hideomi ^c,e   Kawasaki, Masashi ^a,c  

^a TOHOKU UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c Combinatorial Mat Explor/Technol ^*  (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

^e TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; EPITAXIAL GROWTH; FERROMAGNETISM; HALL EFFECT; IMPURITIES; LATTICE CONSTANTS; MAGNETIC FIELDS; MAGNETIZATION; MAGNETOMETERS; MORPHOLOGY; SEMICONDUCTOR DOPING; THERMAL EFFECTS; THIN FILMS;

ELECTRON DOPING; FERROMAGNETIC SEMICONDUCTORS;

MAGNETIC SEMICONDUCTORS;

EID: 1842731291     PISSN: 14761122     EISSN: None     Source Type: Journal    
DOI: 10.1038/nmat1099     Document Type: Article

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