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Volumn 84, Issue 2, 2004, Pages 173-175

Ultraviolet detection with ultrathin ZnO epitaxial films treated with oxygen plasma

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHEMISORPTION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; MICROSTRUCTURE; OPTICAL PROPERTIES; PHOTOCURRENTS; PLASMAS; THICKNESS MEASUREMENT; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

EID: 0842333251     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1640468     Document Type: Article
Times cited : (199)

References (18)
  • 5
    • 3142657265 scopus 로고
    • edited by E. Kaldis (North-Holland, New York); Chapter 3
    • W. Hirschwald, in Current Topics in Materials Science, edited by E. Kaldis (North-Holland, New York, 1981), vol. 7, Chapter 3.
    • (1981) Current Topics in Materials Science , vol.7
    • Hirschwald, W.1
  • 10
    • 0842266810 scopus 로고    scopus 로고
    • note
    • In this inductively coupled plasma experiment, the RIE power was set to a minimum level (~5 W) so as to keep the plasma sheath voltage low and thus to avoid/minimize the etching effect.
  • 17
    • 0842331545 scopus 로고    scopus 로고
    • note
    • In a separate UV detection experiment that was performed employing a different apparatus, the decay time constant was measured to be less than 50 μs, which is still below the detection limit of the setup.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.