Ultrahigh-density nanowire lattices and circuits

Science

Volumn 300, Issue 5616, 2003, Pages 112-115

  Melosh, Nicholas A ^a,b   Boukai, Akram ^a,b   Diana, Frederic ^c   Gerardot, Brian ^c   Badolato, Antonio ^c   Petroff, Pierre M ^c   Heath, James R ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT THEORY; FILM GROWTH; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR MATERIALS; THIN FILMS;

NANOWIRE CIRCUITS;

NANOTECHNOLOGY;

METAL DERIVATIVE;

NANOTECHNOLOGY;

ARTICLE; DENSITY; EQUIPMENT DESIGN; NANOTECHNOLOGY; PRIORITY JOURNAL; SEMICONDUCTOR; STRUCTURE ANALYSIS; SYNTHESIS;

EID: 0037418895     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.1081940     Document Type: Article

References (20)

1. C. Vieu et al., Appl. Surf. Sci, 164, 111 (2000).
2. Y. Xia et al., Science 273, 347 (1996).
3. S. Y. Chou, P. R. Krauss, P. J. Renstrom, Science 272, 85 (1996).
4. We have reproduced this technique on more than a dozen commercially purchased and grown-in-house superlattices, and we have found that there is appreciable chemical variability from wafer to wafer, with a corresponding variability in etch chemistry.
5. Currently the superlattice is not being reused because of the small amount necessary for each imprint. However, polishing of GaAs/AlGaAs superlattices is well established for laser devices and may be useful here.
6. The brightness/contrast of the SEM images was adjusted, but no other image processing was used.
7. Y. Huang, X. F. Duan, Q. Q. Wei, C. M. Lieber, Science 291, 630 (2001).
8. M. R. Diehl et al., Angew. Chem. Int. Ed. 41, 353 (2001).
9. 2 RIE at low power (80 W) and pressure (5 mT) to carefully control the etch rate.
10. Contacts were made by using EBL to define ∼100nm wires placed on either side of the etched portion of the wire array. Accurate placement of the contact wires was achieved with the use of predeposited alignment markers. Wires with narrow pitch (<80 nm) could generally not be individually addressed this way because of the resolution limits of EBL. Contact of a single wire was achieved by depositing electrodes onto all the wires in parallel, then using a focused ion beam to cut all but one wire between the electrodes:
11. The metal nanowires (>15 nm wide) exhibited consistent bulk metallic conductivity to 4 K; smaller wires could not be measured individually. The conductivity of the SOI nanowires fluctuated much more widely, depending on the processing conditions and nanowire crystallographic orientation.
12. A. N. Cleland, M. L. Roulkes, J. Appl. Phys. 92, 2758 (2002).
13. In a strong magnetic field, current flowing through the wires creates a Lorentz force orthogonal to the magnetic field and current directions, in turn creating an oscillatory force on the wire with the frequency of the applied ac current. At resonance, the wire oscillates though the magnetic field with appreciable amplitude, producing an induction current that can be measured with a network analyzer. To enhance sensitivity, we used a current-sensitive bridge circuit to reduce background and reflected intensity.
14. P. Mohanty et al., Phys. Rev. B 66, 085416 (2002).
15. J. R. Heath, P. J. Kuekes, G. Snider, R. S. Williams, Science 280, 1716 (1998).
16. Yi Luo et al., ChemPhysChem 2002, 519 (2002).
17. A. Bachtold, P. Hadley, T. Nakanishi, C. Dekker, Science 294, 1317 (2001).
18. Y. Huang et al., Science 294, 1313 (2001).
19. P. J. Kuekes, R. S. Williams, U.S. Patent 6,256,767 (2001).
20. Supported by the Office of Naval Research and the Defense Advanced Research Projects Agency. We thank M. Roukes and his group for teaching us how to perform high-frequency nanomechanical resonator measurements.