Positive temperature coefficient resistance and humidity sensing properties of Cd-doped ZnO nanowires

Applied Physics Letters

Volumn 84, Issue 16, 2004, Pages 3085-3087

  Wan, Q ^a   Li, Q H ^a   Chen, Y J ^a   Wang, T H ^a   He, X L ^b   Gao, X G ^b   Li, J P ^b  

^a INSTITUTE OF PHYSICS   (China)

^b INSTITUTE OF ELECTRONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC HUMIDITY; CADMIUM; CHEMICAL SENSORS; DOPING (ADDITIVES); ELECTRIC RESISTANCE; EVAPORATION; HIGH RESOLUTION ELECTRON MICROSCOPY; MICROSTRUCTURE; MOISTURE; SYNTHESIS (CHEMICAL); THERMAL EFFECTS; ZINC OXIDE;

AMBIENT GAS; GROWTH TIME; NANOWIRES; TEMPERATURE COEFFICIENT;

NANOSTRUCTURED MATERIALS;

EID: 2442513937     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1707225     Document Type: Article

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