Self-forming nanoscale devices

Materials Today

Volumn 6, Issue 10, 2003, Pages 22-31

  Samuelson, Lars ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON;

NANOSCALE DEVICES;

NANOSTRUCTURED MATERIALS;

EID: 0141642013     PISSN: 13697021     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-7021(03)01026-5     Document Type: Article

References (34)

1. Leo Esaki and Ivar Giaever received the 1973 Nobel Prize in Physics, www.nobel.se/physics/laureates/1973/.
2. Zhores Alferov and Herbert Kroemer received the 2000 Nobel Prize in Physics, www.nobel.se/physics/laureates/2000/.
3. Sakaki, H., Jap. J. Appl. Phys. (1980) 19, L735.
4. Reed, M. A., et al., Phys. Rev. Lett. (1988) 60, 535; Randall, J. N., et al., In: Heterostructure and Quantum Devices, Academic Press (1994).
5. Reed, M. A., et al., Phys. Rev. Lett. (1988) 60, 535; Randall, J. N., et al., In: Heterostructure and Quantum Devices, Academic Press (1994).
6. Seifert, W., et al., Prog. Crystal Growth Charact. (1996) 33, 423.
7. Hara, S., et al., J. Cryst. Growth (1994) 145, 692.
8. Miller, M. S., et al., J. Cryst. Growth (1991) 111, 323.
9. Bhat, R., et al., J. Cryst. Growth (1988) 93, 850.
10. Kapon, E., et al., Phys. Rev. Lett. (1989) 63, 430.
11. Wagner, R. S., In: Whisker Technology, Levitt, A. P., (ed.) Wiley, New York, (1970).
12. Yazawa, M., et al., Appl. Phys. Lett. (1991) 58, 1080.
13. Haraguchi, K., et al., Appl. Phys. Lett. (1992) 60, 745.
14. Hiruma, K., et al., J. Appl. Phys. (1995) 77, 447.
15. Duan, X. F., et al., Appl. Phys. Lett. (2000) 76, 1116.
16. Cui, Y., et al., J. Phys. Chem. B (2000) 104, 5213.
17. Huang, Y., et al., Science (2001) 294, 1313.
18. Cui, Y., et al., Science (2001) 293, 1289.
19. Huang, M. H, et al., Science (2001) 292, 1897.
20. Ohlsson, B. J., et al., Appl. Phys. Lett. (2001) 79, 3335.
21. Ohlsson, B. J., Growth & characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures, Presented at MSS10, Linz, Austria, (2001); Physica E (2002) 13, 1126.
22. Ohlsson, B. J., Growth & characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures, Presented at MSS10, Linz, Austria, (2001); Physica E (2002) 13, 1126.
23. Samuelson, L., 1D stacking of strained quantum dots via self-organization and during whisker growth, Invited talk at MRS Fall Meeting, Boston, (2001).
24. Björk, M. T., et al., Nano Lett. (2002) 2, 87.
25. Björk, M. T., et al., Appl. Phys. Lett. (2002) 80, 1058.
26. Wu, Y., et al., Nano Lett. (2002) 2, 83.
27. Gudiksen, M. S., et al., Nature (2002) 415, 617.
28. Service, R. F., Science (2002) 295, 946.
29. Björk, M. T., et al., Appl. Phys. Lett. (2002) 81, 4458.
30. Thelander, C., et al., Appl. Phys. Lett. (2003), in press.
31. Imamoglu, A., et al., Phys. Rev. Lett. (1994) 72, 210.
32. Panev, N., et al., Appl. Phys. Lett. (2003), in press.
33. Capasso, F., et al., Phys. Today, (May 2002), 34.
34. Mårtensson, T., et al., unpublished results.