Time-resolved and time-integrated photoluminescence in ZnO epilayers grown on Al2O3(0001) by metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 80, Issue 11, 2002, Pages 1924-1926

  Jung, S W ^a   Park, W I ^a   Cheong, H D ^a   Yi, Gyu Chul ^a   Jang, Hyun M ^a   Hong, S ^a   Joo, T ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BOUND EXCITON PEAKS; DECAY TIME CONSTANT; EPILAYERS GROWN; EPITAXIALLY GROWN; FREE-EXCITON PEAK; HIGH QUALITY; LEAST SQUARES; LOW-PRESSURE METALORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE SPECTRUM; PL MEASUREMENTS; PL SPECTRA; ROOM TEMPERATURE; TIME-INTEGRATED PHOTOLUMINESCENCE; TIME-RESOLVED; TIME-RESOLVED PL MEASUREMENT; ZNO; ZNO FILMS; ZNO THIN FILM;

EXCITONS; METALLIC FILMS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; VAPORS; ZINC OXIDE;

EPITAXIAL GROWTH;

EID: 79956032999     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1461051     Document Type: Article

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