ZnO nanowire growth and devices

Materials Science and Engineering R: Reports

Volumn 47, Issue 1-2, 2004, Pages 1-47

  Heo, Y W ^a   Norton, D P ^a   Tien, L C ^a   Kwon, Y ^a   Kang, B S ^a   Ren, F ^a   Pearton, S J ^a   Laroche, J R ^b  

^a University of Florida   (United States)

^b RAYTHEON COMPANY   (United States)

Author keywords

Bandgap; Nanorods; Nanowires; ZnO

Indexed keywords

BANDGAP; NANORODS; NANOWIRES; SONICATION;

ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; LIGHT POLARIZATION; LIGHT SOURCES; NUCLEATION; SCHOTTKY BARRIER DIODES; SYNTHESIS (CHEMICAL); THRESHOLD VOLTAGE; TRANSCONDUCTANCE; TRANSISTORS; ZINC OXIDE;

NANOSTRUCTURED MATERIALS;

EID: 11044236143     PISSN: 0927796X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mser.2004.09.001     Document Type: Review

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