Air-stable n-type carbon nanotube field-effect transistors with Si 3N4 passivation films fabricated by catalytic chemical vapor deposition

Applied Physics Letters

Volumn 86, Issue 11, 2005, Pages 1-3

  Kaminishi, Daisuke ^a,b   Ozaki, Hirokazu ^a,b   Ohno, Yasuhide ^a,b   Maehashi, Kenzo ^a,b   Inoue, Koichi ^a,b   Matsumoto, Kazuhiko ^a,b   Seri, Yasuhiro ^c   Masuda, Atsushi ^c   Matsumura, Hideki ^c  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CATALYSIS; CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; PASSIVATION; SILICON NITRIDE; SUPERCONDUCTING FILMS; VACUUM APPLICATIONS;

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS (CNTFET); CATALYTIC CHEMICAL VAPOR DEPOSITION (CAT-CVD); ELECTRICAL MEASUREMENTS; PASSIVATION FILMS;

CARBON NANOTUBES;

EID: 17944376534     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1886898     Document Type: Article

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