Current analysis of polyimide passivated InGaP/GaAs HBT

IEE Proceedings: Circuits, Devices and Systems

Volumn 143, Issue 5, 1996, Pages 307-312

  Masum, J ^a   Parmiter, P ^a  

^a KING'S COLLEGE LONDON   (United Kingdom)

Author keywords

Electron hole recombination; Hetcrojwiction bipolar transistors; Ingap gaas; Passivation; Polyiiniile layers

Indexed keywords

ELECTRIC CURRENTS; LEAKAGE CURRENTS; PASSIVATION; POLYIMIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS;

BASE CURRENTS; COLLECTOR CURRENTS; POLYIMIDE DEPOSITION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030259959     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:19960567     Document Type: Article

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