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Volumn 279, Issue 5348, 1998, Pages 208-211

A laser ablation method for the synthesis of crystalline semiconductor nanowires

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSTS; NANOSTRUCTURED MATERIALS; PHASE DIAGRAMS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SYNTHESIS (CHEMICAL);

EID: 0032498174     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.279.5348.208     Document Type: Article
Times cited : (4468)

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    • Analysis of the images suggests that the nanowires correspond to at least 50% of the total product. The remainder of the product corresponds to clusters containing Si, Fe, and O.
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    • 2 is the high-temperature crystal polytype. We believe that this crystal form is kinetically trapped when the nanowire growth is terminated by quenching on the cold finger.
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    • x or
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    • Si nanowires with 10-to 25-nm diameters have been reported recently in surface-supported VLS growth at 320°C (8). These nanowires, which have somewhat larger diameters than those produced in the present studies, have a substantial number of kink defects. At higher growth temperatures at which straight, crystalline nanowires (comparable with the present work) are produced, the nanowire diameters are substantially larger: 40 to 100 nm.
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    • note
    • We thank F. Spaepen, W. Klemperer, J. H. Chen, and R. Gordon for discussions and Y. Lu and M. Frongillo for their help in obtaining TEM data. C.M.L. acknowledges support of this work by the Office of Naval Research and the NSF Materials Research Science and Engineering Center.


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