Oxygen reaction-diffusion in metalorganic chemical vapor deposition HfO2 films annealed in O2

Applied Physics Letters

Volumn 81, Issue 9, 2002, Pages 1669-1671

  Bastos, K P ^a   Morais, J ^a   Miotti, L ^a   Pezzi, R P ^a   Soares, G V ^a   Baumvol, I J R ^b   Hegde, R I ^b   Tseng, H H ^b   Tobin, P J ^b  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC TRANSPORT; HAFNIUM SILICATES; INTERMEDIATE LAYERS; NITRIDED; NUCLEAR REACTION ANALYSIS; OXYNITRIDES; REACTION DIFFUSION; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SI SUBSTRATES; SILICON OXYNITRIDES; THIN FILM COMPOSITION; ULTRA-THIN;

HAFNIUM; HAFNIUM OXIDES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICATES; SILICON NITRIDE; SILICON OXIDES; SUBSTRATES; VAPOR DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

REACTION INTERMEDIATES;

EID: 79955989448     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1502006     Document Type: Article

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