Direct measurement of barrier height at the HfO2/poly-Si interface: Band structure and local effects

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2004, Pages 122-123

  Pantisano, Luigi ^a   Chen, P J ^b   Afanas'ev, V ^c   Ragnarsson, L A ^a   Pourtois, G ^a   Groeseneken, G ^a,c  

^a IMEC   (Belgium)

^b TEXAS INSTRUMENTS   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; INTERNAL PHOTO-EMISSION (IPE); VALENCE BAND ELECTRON TUNNELING (VBET); WORKFUNCTION (WF);

APPROXIMATION THEORY; BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRON MOBILITY; ELECTRON TUNNELING; MOS DEVICES; MOSFET DEVICES; PHOTOCURRENTS; PHOTOEMISSION; POLYSILICON; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR DOPING;

HAFNIUM COMPOUNDS;

EID: 4544265729     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. L-A.Ragnarsson, IEDM 2003;
2. C.Hobbs, VLSI 2002;
3. A.Kaneko SSDM 2003.
4. S.Kubicek, ESSDERC 2003;
5. Nicollian and Brews, MOS physics and technology, chap. 10;
6. Adamchuck and Afanasiev, Progress in Surface Science, 41(109), 1992;
7. G.Pourtois, in preparation;
8. A.Shanware, IEDM 1999 and Microelectr. Engin. 1999, pp.295.