Correlation between Stress-Induced Leakage Current (SILC) and the HfO2 bulk trap density in a SiO2/HfO2 stack

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 181-187

  Crupi, F ^a   Degraeve, R ^b   Kerber, A ^c   Kwak, D H ^d   Groeseneken, G ^b,e  

^a UNIVERSITY OF CALABRIA   (Italy)

^b IMEC   (Belgium)

^c INFINEON TECHNOLOGIES AG   (Germany)

^d SAMSUNG Electronics   (South Korea)

^e UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM OXIDES; RELIABILITY; SILICA;

BULK TRAPS; CONDUCTION PATHS; CURRENT INCREASE; ELEVATED TEMPERATURE; STRESS CONDITION; STRESS VOLTAGES; STRESS-INDUCED LEAKAGE CURRENT; TRAP GENERATION;

LEAKAGE CURRENTS;

EID: 33751121032     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315321     Document Type: Conference Paper

References (12)

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