Performance comparison of sub 1 nm sputtered TiN/HfO2 nMOS and pMOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 311-314

  Tsai, W ^a   Ragnarsson, L A ^b   Pantisano, L ^b   Chen, P J ^c   Onsia, B ^b   Schram, T ^b   Cartier, E ^d   Kerber, A ^e   Young, E ^f   Caymax, M ^b   De Gendt, S ^b   Heyns, M ^b  

^a Intel Corporation Belgium   (Belgium)

^b IMEC   (Belgium)

^c TEXAS INSTRUMENTS   (Belgium)

^d IBM   (Belgium)

^e INFINEON TECHNOLOGIES AG   (Germany)

^f PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; ELECTRODES; ELECTRON MOBILITY; FABRICATION; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; SILICA; SPUTTERING; TITANIUM NITRIDE;

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION (ALCVD); CHARGE DENSITY;

MOSFET DEVICES;

EID: 17644444907     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. M. Tuominen et al., ECS, PV 2000-9, p. 271, (2000).
2. F. De Smedt, et al., JECS., 146, (5), p. 1873, (1999).
3. W. Tsai, et al., VLSI Tech. Symp., p. 21, (2003).
4. nd ESSDERC, p. 583, (2002).
5. A. Kerber, et al., Proceedings of IRPS, pp. 41, (2003).
6. L. Pantisano, et al., VLSI Tech. Symp., p. 163, (2003).
7. A. Kerber, et al., IEEE Electron. Dev. Lett., 24, p. 81, (2003).
8. A. Kumar, et al., Journal of Applied Phys., 94, p. 1728, (2003).
9. A. Kerber, et al., IEEE Trans. on Elect. Dev., 50, p. 1261, (2003).
10. nd Intl. High k Symp., (2003).