Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 133-136

  Lee, Byoung Hun ^a   Kang, Laegu ^a   Qi, Wen Jie ^a   Nieh, Renee ^a   Jeon, Yongjoo ^a   Onishi, Katsunori ^a   Lee, Jack C ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; OXIDES; PERMITTIVITY; QUANTUM THEORY; RELIABILITY; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

CAPACITANCE VOLTAGE CHARACTERISTICS; EQUIVALENT OXIDE THICKNESS; GATE DIELECTRIC; HAFNIUM OXIDE; OXYGEN MODULATED DC MAGNETRON SPUTTERING; STRESS INDUCED LEAKAGE CURRENT;

ULTRATHIN FILMS;

EID: 0033307321     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1999.823863     Document Type: Conference Paper

References (11)