Model for interface defect and positive charge generation in ultrathin SiO2/ZrO2 gate dielectric stacks

Applied Physics Letters

Volumn 81, Issue 4, 2002, Pages 709-711

  Houssa, M ^a   Autran, J L ^a   Stesmans, A ^b   Heyns, M M ^c  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY E; DEPASSIVATION; GATE DIELECTRIC STACKS; GAUSSIANS; INJECTED ELECTRONS; INTERFACE DEFECTS; MEAN VALUES; POSITIVE CHARGES; POSITIVELY CHARGED; SI-H BONDS; SILICON DANGLING BOND; ULTRA-THIN;

ACTIVATION ENERGY; DANGLING BONDS; DEFECTS; DIELECTRIC MATERIALS; DISSOCIATION; ELECTRIC FIELDS; GATE DIELECTRICS; HYDROGEN; SILICON COMPOUNDS; SILICON OXIDES; TITANIUM NITRIDE; ZIRCONIUM ALLOYS;

SILICON;

EID: 79955989147     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1496146     Document Type: Article

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