Electrical and physical properties of HfO2 films prepared by remote plasma oxidation of Hf metal

Applied Physics Letters

Volumn 83, Issue 11, 2003, Pages 2229-2231

  Yamamoto, Kazuhiko ^a   Hayashi, Shigenori ^a   Niwa, Masaaki ^a   Asai, Masayuki ^b   Horii, Sadayoshi ^b   Miya, Hironobu ^b  

^a PANASONIC CORPORATION   (Japan)

^b HITACHI KOKUSAI ELECTRIC INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDATION; PLASMA APPLICATIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

PLASMA OXIDATION;

HAFNIUM COMPOUNDS;

EID: 0142026356     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1609246     Document Type: Article

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