Detrimental impact of hydrogen on negative bias temperature instabilities in HfO2-based pMOSFETs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2004, Pages 212-213

  Houssa, M ^a   De Gendt, S ^a   Autran, J L ^b   Groeseneken, G ^a   Heyns, M M ^a  

^a IMEC   (Belgium)

^b AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CHEMICAL BONDS; DEFECTS; DIELECTRIC MATERIALS; DOPING (ADDITIVES); GATES (TRANSISTOR); LAYERED MANUFACTURING; SPUTTER DEPOSITION; THRESHOLD VOLTAGE;

ATOMIC LAYER DEPOSITION (ALD); GATE BIAS; GATE STACK; OXYNITRIDES;

CMOS INTEGRATED CIRCUITS;

EID: 4544291166     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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