A proposed model for positive charge in sio2 thin films over-coordinated oxygen centers

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 1, 1996, Pages 2617-2626

  Warren, W L ^a   Vanheusden, K ^a   Fleetwood, D M ^a   Schwank, J R ^b   Shaneyfelt, M R ^b   Winokur, P S ^b   Devine, R A B ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC FILMS; ELECTRIC CHARGE; HYDROGEN; OXIDATION; OXYGEN; PARAMAGNETIC RESONANCE; RADIATION EFFECTS; SEMICONDUCTING FILMS; SEMICONDUCTOR JUNCTIONS; SILICA; THERMAL EFFECTS;

OXYGEN CENTERS; VACANCY HOLE TRAPS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0030349736     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556844     Document Type: Article

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