Negative bias-temperature instabilities in metal-oxide-silicon devices with SiO 2 and SiO xN y/HfO 2 gate dielectrics

Applied Physics Letters

Volumn 84, Issue 22, 2004, Pages 4394-4396

  Zhou, X J ^a   Tsetseris, L ^a   Rashkeev, S N ^a   Fleetwood, D M ^a   Schrimpf, R D ^a   Pantelides, S T ^a   Felix, J A ^b   Gusev, E P ^c   D'Emic, C ^c  

^a VANDERBILT UNIVERSITY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DENSITY; GATE DIELECTRICS; NEGATIVE BIAS-TEMPERATURE INSTABILITY (NBTI); SURFACE POTENTIAL;

ACTIVATION ENERGY; ANNEALING; CAPACITANCE; CHEMICAL BONDS; DIELECTRIC MATERIALS; ELECTRIC CHARGE; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRON TUNNELING; HYDROGEN; OXIDATION; PASSIVATION; PROBABILITY DENSITY FUNCTION; PROTONS; SILICA;

MOS CAPACITORS;

EID: 3042697157     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1757636     Document Type: Article

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