Fermi Level Pinning at the PolySi/Metal Oxide Interface

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2003, Pages 9-10

  Hobbs, C ^a   Fonseca, L ^a   Dhandapani, V ^a   Samavedam, S ^a   Taylor, B ^a   Grant, J ^a   Dip, L ^a   Triyoso, D ^a   Hegde, R ^a   Gilmer, D ^a   Garcia, R ^a   Roan, D ^a   Lovejoy, L ^a   Rai, R ^a   Hebert, L ^a   Tseng, H ^a   White, B ^a   Tobin, P ^a  

^a MOTOROLA INC   (United States)

Author keywords

Al2O3; Fermi pinning; Gate dielectric; HfO2; PolySi

Indexed keywords

ALUMINUM COMPOUNDS; COMPUTER SIMULATION; DIELECTRIC DEVICES; FERMI LEVEL; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); MOS DEVICES; MOSFET DEVICES; HAFNIUM OXIDES; SILICON COMPOUNDS; THRESHOLD VOLTAGE;

FERMI PINNING; GATE DIELECTRICS;

POLYSILICON; GATE DIELECTRICS;

A12O3; DEVICE DATA; DEVICE SIMULATIONS; FERMI LEVEL PINNING; FERMI PINNING; FUNDAMENTAL CHARACTERISTICS; HIGH-THRESHOLD VOLTAGES; METAL OXIDE INTERFACE; POLYSI;

EID: 0141649587     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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4. Y. Yeo, et al., IEEE EDL p. 342 (2002)
5. J. Lee et. al., IEDM, p645 (2000)
6. L. Fonseca et al. (to be submitted for publication)
7. J. Tersoff, Phys. Rev. Lett 6, p. 465 (1984)