SILC-related effects in flash e2PROM's-Part I: A Quantitative model for steady-state SILC

IEEE Transactions on Electron Devices

Volumn 45, Issue 8, 1998, Pages 1745-1750

  De Blauwe, Jan ^a,b   Van Houdt, Jan ^a,b   Wellekens, Dirk ^a,b   Groeseneken, Guido ^a,b   Macs, Herman E ^a,b  

^a IEEE   (Belgium)

^b IMEC   (Belgium)

Author keywords

Flash e2prom reliability; Integrated circuit reliability; Stress induced leakage current; Trap generation

Indexed keywords

CAPACITORS; DIELECTRIC MATERIALS; ELECTRON TUNNELING; PROM;

CONSTANT CURRENT STRESS; FOWLER-NORDHEIM TUNNELING; STRESS INDUCED LEAKAGE CURRENT; TRAP GENERATION;

LEAKAGE CURRENTS;

EID: 0032141870     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.704374     Document Type: Article

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