Direct Measurement of the Inversion Charge in MOSFETs: Application to Mobility Extraction in Alternative Gate Dielectrics

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2003, Pages 159-160

  Kerber, A ^a,c,e   Cartier, E ^b,c   Ragnarsson, L A ^c   Rosmeulen, M ^c,d   Pantisano, L ^c   Degraeve, R ^c   Kim, Y ^c   Groeseneken, G ^c,d  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b IBM RESEARCH   (United States)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

^e DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRIC CHARGE; ELECTRON MOBILITY; GATES (TRANSISTOR); CHARGE TRAPPING; DIELECTRIC MATERIALS; GATE DIELECTRICS; SILICA;

INVERSION CHARGE PUMPING (ICP);

MOSFET DEVICES;

ALTERNATIVE GATE DIELECTRICS; CHARGE PUMPING; CHARGE PUMPING TECHNIQUE; CHARGE-TRAPPING; DIRECT MEASUREMENT; INVERSION CHARGE; LONG CHANNEL DEVICES; MEASUREMENTS OF; MOBILITY EXTRACTION; MOSFETS;

EID: 0141830846     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. see IEDM Tech. Digest, 2001 and 2002.
2. A. Kerber et al., IEEE Electron Device Lett., accepted for publication.
3. Y. Kim et al., IEDM Tech. Digest, pp. 455, 2001.
4. G. Van den Bosch et al., IEEE Electron Device Lett., Vol. 14, pp. 107, 1993.
5. L.- Å. Ragnarsson et al., Appi. Phys. Lett. 78, pp. 4169, 2001.
6. S. Saito et al., Appl. Phys. Lett. 81, pp. 2391, 2002.
7. M. Fischetti et. al., J. Appl. Phys. 90, pp. 4587, 2001.