Kinetic pathways to strain relaxation in the Si-Ge system

MRS Bulletin

Volumn 21, Issue 4, 1996, Pages 31-37

  Jesson, D E ^a   Chen, K M ^a   Pennycook, S J ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EFFECTS; INTERFACIAL ENERGY; LATTICE CONSTANTS; MORPHOLOGY; NUCLEATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; STRESS RELAXATION; SURFACES; THREE DIMENSIONAL;

ISLAND FORMATION; KINETIC PATHWAYS; PLANAR FILM; PLANAR WETTING LAYER; STRAIN INDUCED TRANSITION; STRAIN RELAXATION; SURFACE ISLANDS; TWO DIMENSIONAL;

FILM GROWTH;

EID: 0030123723     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/S0883769400035314     Document Type: Article

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