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Thin Solid Films

Volumn 367, Issue 1-2, 2000, Pages 75-84

Molecular beam epitaxy of silicon-germanium nanostructures

(6) Pchelyakov, O P a Bolkhovityanov, Yu B a Dvurechenskii, A V a Nikiforov, A I a Yakimov, A I a Voigtlander B b

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

b FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

Germanium; Heteroepitaxy; Molecular beam epitaxy; Quantum dots; Self organization in epitaxy; Silicon

Indexed keywords

EID: 0003041691 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(00)00667-2 Document Type: Article

Times cited : (87)

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