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Volumn 58, Issue 7, 1998, Pages 3932-3936
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Surface segregation behavior of B, Ga, and Sb during Si MBE: Calculations using a first-principles method
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HITACHI LTD
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0010483311
PISSN: 10980121
EISSN: 1550235X
Source Type: Journal
DOI: 10.1103/PhysRevB.58.3932 Document Type: Article |
Times cited : (25)
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References (19)
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