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Applied Surface Science

Volumn 104-105, Issue , 1996, Pages 510-515

AFM and RHEED study of Ge islanding on Si(111) and Si(100)

(3) Deelman, Peter W a Thundat, Thomas b Schowalter, Leo J a

a RENSSELAER POLYTECHNIC INSTITUTE (United States)

b OAK RIDGE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; FILM GROWTH; MOLECULAR BEAM EPITAXY; NUCLEATION; RELAXATION PROCESSES; SEMICONDUCTING GERMANIUM; STRAIN; THERMAL EFFECTS; THIN FILMS;

ISLAND NUCLEATION;

SEMICONDUCTING SILICON;

EID: 0030233172 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(96)00195-X Document Type: Article

Times cited : (33)

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