Strain compensation by heavy boron doping in Si1-xGex layers grown by solid phase epitaxy

Journal of Materials Research

Volumn 12, Issue 7, 1997, Pages 1698-1705

  Rodriguez A ^a   Rodriguez T ^a   Sanz Hervas A ^a   Kling, A ^b   Soares, J C ^b   Da Silva, M F ^c   Ballesteros, C ^d   Gwilliam, R M ^e  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

^c INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^d UNIVERSIDAD CARLOS III DE MADRID   (Spain)

^e UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CRYSTAL LATTICES; CRYSTAL ORIENTATION; ELECTRON MICROSCOPY; EPITAXIAL GROWTH; INTERFACES (MATERIALS); SEMICONDUCTOR DOPING; SILICON WAFERS; STRAIN; STRESS RELAXATION; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

SOLID PHASE EPITAXY; STRAIN COMPENSATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031186554     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1997.0234     Document Type: Article

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