Lateral confinement by low pressure chemical vapor deposition-based selective epitaxial growth of Si1-xGex/Si nanostructures

Journal of Applied Physics

Volumn 81, Issue 10, 1997, Pages 6709-6715

  Vescan, L ^a   Dieker, C ^a   Souifi, A ^b   Stoica, T ^c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^c INSTITUTE OF ATOMIC PHYSICS   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000882062     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365212     Document Type: Article

References (26)

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