Effects of high B-doping on Si(001) dangling bond densities, H desorption and film growth kinetics during gas-source molecular beam epitaxy

Surface Science

Volumn 392, Issue 1-3, 1997, Pages

  Glass, G ^a   Kim, H ^a   Sardela, M R ^a   Lu, Q ^a   Carlsson, J R A ^a   Abelson, J R ^a   Greene, J E ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Boron; Chemical vapor deposition; Models of surface chemical reactions; Models of surface kinetics; Semi empirical models and model calculations; Semiconductor semiconductor thin film structures; Silicon; Single crystal epitaxy

Indexed keywords

BORON; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; REACTION KINETICS; RELAXATION PROCESSES; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SURFACE PHENOMENA; TEMPERATURE PROGRAMMED DESORPTION;

ADATOMS; DANGLING BOND DENSITY; GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE); SURFACE RECONSTRUCTION; SURFACE RELAXATION;

SEMICONDUCTING SILICON;

EID: 0031360666     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00708-5     Document Type: Article

References (22)

1. Q. Lu, T.R. Bramblett, N.-E. Lee, M.-A. Hasan, T. Karasawa, J.E. Greene, J. Appl. Phys. 77 (1995) 3067.
2. T. Uchino, T. Shiba, T. Kikuchi, Y. Tamaki, A. Watanabe, Y. Kiyota, IEEE Trans. Electron. Dev. 42 (1995) 406.
3. Z. Matutinovickrstelj, V. Venkataraman, E.J. Prinz, J.C. Sturm, C.W. Magee, IEEE Trans. Electron. Dev. 43 (1996) 457.
4. Y. Kinoshita, K. Imai, H. Yoshida, H. Suzuki, T. Tatsumi, T. Yamazaki, in: Proceedings of the International Electronic Devices Meeting, 1994, p. 441.
5. Y. Kiyota, T. Nakamura, S. Suzuki, T. Inada, IEEE Trans. Elec. E79C (1996) 554.
6. R.L. Headrick, B.E. Weir, A.F. Levi, D.J. Eaglesham, L.C. Feldman, Appl. Phys. Lett. 57 (1990) 2779.
7. Y. Wang, R.J. Hamers, Appl. Phys. Lett. 56 (1995) 2057.
8. Y. Wang, R.J. Hamers, J. Vac. Sci. Technol. A 13 (1995) 1431.
9. Y. Wang, R.J. Hamers, E. Kaxiras, Phys. Rev. Lett. 74 (1995) 403.
10. S.M. Sze, Physics of Semiconductor Devices, 2nd ed., Wiley, New York, 1981, p. 69.
11. F.N. Schwettman, J. Appl. Phys. 45 (1974) 1918.
12. G.L. Vick, K.M. Whittle, J. Electrochem. Soc. 119 (1969) 1142.
13. T.R. Bramblett, Q. Lu, T. Karasawa, M.-A. Hasan, S.K. Jo, J.E. Greene, J. Appl. Phys. 76 (1994) 1884.
14. H. Kim, G. Glass, S.Y. Park, T. Spila, N. Taylor, J.R. Abelson, J.E. Greene, Appl. Phys. Lett. 69 (1996) 3869.
15. G. Boishin, L. Surnev, Surf. Sci. 345 (1996) 64.
16. J.J. Boland, J. Vac. Sci. Technol. A 10 (1992) 2458.
17. U. Hofer, L. Li, T.F. Heinz, Phys Rev. B 45 (1992) 9485.
18. B.E. Weir, R.L. Headrick, Q. Shen, L.C. Feldman, M.S. Hybertson, M. Needels, M. Schluter, T.R. Hart, Phys. Rev. B 46 (1992) 12861.
19. Ph. Avouris, I.-W. Lyo, F. Bozso, E. Kaxiras, J. Vac. Sci. Technol. A 8 (1990) 3405.
20. S.A. Barnett, J.E. Greene, Surf. Sci. 151 (1985) 67.
21. In this calculation, we have taken, following Refs. [6,7], complete B coverage to be 0.5 Si(001) monolayers.
22. E. de Frésart, K.L. Wang, S.A. Rhee, Appl. Phys. Lett. 53 (1988) 48.