Epitaxial growth of ultrathin Si caps on Si(100):B surface studied by scanning tunneling microscopy

Applied Physics Letters

Volumn 69, Issue 4, 1996, Pages 494-496

  Zhang, Z ^a   Kulakov, M A ^a   Bullemer, B ^a   Eisele, I ^a   Zotov, A V ^a,b,c  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^b INSTITUTE OF AUTOMATION AND CONTROL PROCESSES   (Russian Federation)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001451712     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117764     Document Type: Article

References (20)

1. H. P. Zeindl, T. Wegehaupt, I. Eisele, H. Oppolzer, H. Reisinger, G. Tempel, and, F. Koch, Appl. Phys. Lett. APPLAB 50, 1164 (1987).
2. A. A. van Gorkum, K. Nakagawa, and, Y. Shiraki, J. Appl. Phys. JAPIAU 65, 2485 (1989).
3. N. L. Mattey, M. Hopkinson, R. F. Houghton, M. G. Dowsett, D. S. McPhail, T. E. Whall, E. H. C. Parker, G. R. Booker, and, J. Whitehurst, Thin Solid Films THSFAP 184, 15 (1990).
4. A. V. Zotov, A. A. Saranin, V. G. Lifshits, and, E. A. Khramtsova, Surf. Sci. SUSCAS 230, L147 (1990).
5. I. Eisele, Superlattices Microstruct. SUMIEK 6, 123 (1989).
6. H.-J. Gossmann and, F. C. Unterwald, Phys. Rev. B PRBMDO 47, 12618 (1993).
7. B. E. Weir, L. C. Feldman, D. Monroe, H.-J. Gossmann, R. L. Headrick, and, T. R. Hart, Appl. Phys. Lett. APPLAB 65, 737 (1994).
8. R. L. Headrick, B. E. Weir, A. F. J. Levi, D. J. Eaglesham, and, L. C. Feldman, Appl. Phys. Lett. APPLAB 57, 2779 (1990).
9. B. E. Weir, D. J. Eaglesham, L. C. Feldman, H. S. Luftman, and, R. L. Headrick, Appl. Surf. Sci. ASUSEE 84, 413 (1995).
10. V. G. Lifshits, A. A. Saranin, and A. V. Zotov, Surface Phases on Silicon: Preparation, Structure and Properties (Wiley, Chichester, 1994).
11. P. Heuell, S. Cuzdi, M. A. Kulakov, and, B. Bullemer, Thin Solid Films THSFAP 264, 217 (1995).
12. V. V. Korobtsov, V. G. Lifshits, and, A. V. Zotov, Surf. Sci. SUSCAS 195, 466 (1988).
13. A. V. Zotov, S. V. Ryzhkov, and, V. G. Lifshits, Surf. Sci. SUSCAS 295, L1005 (1993).
14. M. A. Kulakov, Z. Zhang, A. V. Zotov, B. Bullemer, and I. Eisele, Appl. Surf. Sci. (1996) (in press)
15. Z. Zhang, A. V. Zotov, M. A. Kulakov, B. Bullemer, and I. Eisele, J. Vac. Sci. Technol. (to be published).
16. Y. Wang, R. J. Hamers, and, E. Kaxiras, Phys. Rev. Lett. PRLTAO 74, 403 (1995).
17. Y. Wang and, R. J. Hamers, J. Vac. Sci. Technol. A JVTAD6 13, 1431 (1995).
18. The observation of the SPE crystallization at temperature as low as 350 °C indicates that SPE in Si films of a few monolayers is sufficiently facilitated compared to SPE in Si films of conventional thicknesses of 10–100 nm. For the latter case, the extrapolation of the known data [A. V. Zotov and V. V. Korobtsov, J. Cryst. Growth 98, 519 (1989)] to 350 °C yields a negligible SPE rate of the order of [formula omitted].
19. S. Kono, T. Goto, Y. Ogura, and T. Abukawa, in Abstracts of the Second Russia–Japan Seminar on Semiconductor Surfaces, Osaka, Nov. 13–17, 1995, p. 28.
20. A. V. Zotov, M. A. Kulakov, B. Bullemer, and I. Eisele, Phys. Rev. B 53, 12902 (1996).