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Thin Solid Films

Volumn 321, Issue 1-2, 1998, Pages 131-135

Role of strain in dopant surface segregation during Si and SiGe growth by molecular beam epitaxy

(4) Ni, W X a Hansson, G V a Cardenas, J b Svensson, B G b

a LINKÖPING UNIVERSITY (Sweden)

b ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

Author keywords

Dopant surface segregation; Lattice strain; Molecular beam epitaxy

Indexed keywords

MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; STRAIN; SURFACE PHENOMENA;

DOPANT SURFACE SEGREGATION; LATTICE STRAIN; SILICON GERMANIUM; TWO SITE EXCHANGE MODEL;

SEMICONDUCTING FILMS;

EID: 0032064718 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)00461-1 Document Type: Article

Times cited : (9)

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