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Volumn 336, Issue 1-2, 1998, Pages 256-261

Self organization of Ge dots on Si substrates: Influence of misorientation

Author keywords

Misorientation; Self organization; Si substrates

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SILICON WAFERS; SURFACE PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0032310613     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01282-6     Document Type: Article
Times cited : (19)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.