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Volumn 336, Issue 1-2, 1998, Pages 256-261
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Self organization of Ge dots on Si substrates: Influence of misorientation
a a b c c d |
Author keywords
Misorientation; Self organization; Si substrates
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CRYSTAL ORIENTATION;
PHOTOLUMINESCENCE;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SEMICONDUCTING GERMANIUM;
SEMICONDUCTOR GROWTH;
SILICON WAFERS;
SURFACE PROPERTIES;
TRANSMISSION ELECTRON MICROSCOPY;
SILICON GERMANIDE;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 0032310613
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(98)01282-6 Document Type: Article |
Times cited : (19)
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References (13)
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