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Volumn 53, Issue 12, 1996, Pages 7876-7879

Surface roughening during low-temperature Si epitaxial growth on singular vs vicinal Si(001) substrates

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Indexed keywords


EID: 0001486101     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.53.7876     Document Type: Article
Times cited : (68)

References (28)
  • 15
    • 0026170685 scopus 로고
    • Y.-W. Mo and M. G. Lagally, Surf. Sci. 248, 313 (1991).
    • (1991) Surf. Sci. , vol.248 , pp. 313
    • Lagally, M.1
  • 26
    • 0002408798 scopus 로고
    • Assuming the worst case in our experiments with a 40-nm tip radius results in [G(ρ, t)(Formula presented) being underestimated by 20% for films with mound separations d<20 and 10% for films with larger mound separations. These uncertainties, which are inherent in the AFM measurements, were included in determining the overall uncertainties quoted in the text for the effective roughening and growth exponents (Formula presented) and (Formula presented)
    • The effects of using a finite tip radius can be estimated based upon a model developed by J. E. Griffith and D. A. Grigg, J. Appl. Phys. 74, R83 (1993). Assuming the worst case in our experiments with a 40-nm tip radius results in [G(ρ, t)(Formula presented) being underestimated by 20% for films with mound separations d<20 and 10% for films with larger mound separations. These uncertainties, which are inherent in the AFM measurements, were included in determining the overall uncertainties quoted in the text for the effective roughening and growth exponents (Formula presented) and (Formula presented).
    • (1993) J. Appl. Phys. , vol.74 , pp. R83
    • Griffith, J.1    Grigg, D.2
  • 27
    • 0347884938 scopus 로고
    • H.-N. Yang, G.-C. Wang and T.-M. Lu, Phys. Rev. Lett. 73, 2348 (1994).
    • (1994) Phys. Rev. Lett. , vol.73 , pp. 2348


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.