Surface segregation during molecular beam epitaxy: The site-blocking effects of surfactant atoms

Surface Science

Volumn 367, Issue 2, 1996, Pages 231-237

  Xie, M H ^a   Zhang, J ^a   Lees, A ^a   Fernandez, J M ^a   Joyce, B A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Gas source molecular beam epitaxy (GSMBE); Si SiGe; Surface segregation

Indexed keywords

ADSORPTION; FILM GROWTH; GIBBS FREE ENERGY; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; REACTION KINETICS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SURFACE ACTIVE AGENTS; SURFACE PHENOMENA; THERMAL EFFECTS;

SURFACE MEDIATED GROWTH; SURFACE SEGREGATION; SURFACTANT ATOMS;

SEMICONDUCTING FILMS;

EID: 0030289278     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)00872-2     Document Type: Article

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