Silicon-germanium strained layer materials in microelectronics

Advanced Materials

Volumn 11, Issue 3, 1999, Pages 191-204

  Paul, Douglas J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

INSERTION LOSSES; MICROELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; STRAIN;

STRAINED LAYER MATERIALS;

MULTILAYERS;

EID: 0033076887     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-4095(199903)11:3<191::AID-ADMA191>3.0.CO;2-3     Document Type: Article

References (8)

1. J. Bardeen, W. H. Brattain, Phys. Rev. 1948, 71, 230.
2. S. A. Campbell, The Science and Engineering of Microelectronic Fabrication, Oxford University Press, Oxford 1996.
3. I. Rin, III-V Rev. 1995, 8(4), 20.
4. The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA 1997.
5. D. Kahng, in Semiconductor Devices: Pioneering Papers (Ed: S. M. Sze), World Scientific, Singapore 1991, p. 583.
6. R. People, IEEE J. Quantum Electron. 1986, QE-22, 1696.
7. H. Presting, H. Kibbel, M. Jaros, R. M. Turton, U. Menczigar, G. Abstreiter, H. G. Grimmeiss, Semicond. Sci. Technol. 1992, 7, 1127.
8. R. A. Soref, Proc. IEEE 1993, 81, 1687.