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Materials Science and Engineering: B

Volumn 69-70, Issue , 2000, Pages 367-373

Fabrication of self-organised Ge dots using self-patterned SiGe template layer

(4) Berbezier, I a,b Abdallah, M a Ronda, A a Bremond, G a

a CAMPUS DE LUMINY (France)

b INSTITUT DES NANOTECHNOLOGIES DE LYON (France)

Author keywords

Growth mode; Instability; Nanostructure; Optical properties; Self organisation; Silicon Germanium

Indexed keywords

ANNEALING; ASPECT RATIO; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MORPHOLOGY; REACTION KINETICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

PRE-PATTERNED LAYERS; SELF-ORGANIZED DOTS; STEP-BUNCHING INSTABILITY;

NANOSTRUCTURED MATERIALS;

EID: 0033906780 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(99)00265-2 Document Type: Article

Times cited : (14)

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